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2SB1393 - TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220FN 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 4A条一（c）|20FN Silicon PNP epitaxial planar type(For power amplification)

2SB1393_1044108.PDF Datasheet

Part No.

2SB1393 2SB1393A 2SB1392C

Description

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220FN 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 4A条一（c）|20FN
Silicon PNP epitaxial planar type(For power amplification)

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44.95K / 2 Page

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Panasonic Semiconductor

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Part: 2SB1391

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Full text search : TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220FN 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 4A条一（c）|20FN Silicon PNP epitaxial planar type(For power amplification)

Related Part Number

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2N1025 2N2176 2N1475 2N1027 2N1474 2N329B 2N1654 2	5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 50MA I(C) \| TO-5 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 50MA I(C) \| TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 100MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 100MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 100MA I(C) \| TO-5 Silicon Transistors	Semitronics
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
CENW51 CENW57 CENW51A CENW55 CENW56 CENW92	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1A I(C) \| TO-237VAR TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 500MA I(C) \| TO-237VAR TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1A I(C) \| TO-237VAR TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 500MA I(C) \| TO-237VAR TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 500MA I(C) \| TO-237VAR TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 500MA I(C) \| TO-237VAR 晶体管\|晶体管\|进步党\| 300V五（巴西）总裁\| 500mA的一（c）\|37VAR	SMSC, Corp.
2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB	1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1.5A I(C) \| TO-126 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Silicon transistor	IRC Advanced Film NEC[NEC]
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| TO-1 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 500MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 500MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 1A I(C) \| TO-1 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 1A I(C) \| TO-1 TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 500MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 200MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 1.2A I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| CAN TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| CAN TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 1A I(C) \| TO-1 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 1A I(C) \| CAN TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 500MA I(C) \| TO-5 晶体管\|晶体管\|进步党\| 15V的五（巴西）总裁\| 500mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 200MA I(C) 晶体管\|晶体管\|进步党\| 18V的五（巴西）总裁\| 200mA的我（丙	Electronic Theatre Controls, Inc. IDEC, Corp.
2SA1744 2SA1744M 2SA1744L	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 15A I(C) \| TO-220VAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING	NEC Corp.
D42C2 D42C7 D42C6 D40E1 D42C1 D41D8	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-202 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 3A I(C) \| TO-202 TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 2A I(C) \| TO-202AC TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 3A I(C) \| TO-202 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 3A条一（c）\|02 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| TO-202AC	ZF Electronics, Corp.
2SB1572 2SB1572HY	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-243 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 3A条一（c）\|43 PNP SILICON EPITAXIAL TRANSISTOR	NEC, Corp. NEC[NEC]
BD179-6 BD175-16 BD178-6	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-126 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 3A I(C) \| TO-126 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-126 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 3A条一（c）\|26	Motorola Mobility Holdings, Inc.
BCX76-40 BF413 BC140-25 BC537-16 MPS6573 BC328-10	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 800MA I(C) \| TO-92 TRANSISTOR \| BJT \| NPN \| 170V V(BR)CEO \| 50MA I(C) \| TO-92 Stratix II GX FPGA 130K FPGA-1508 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| TO-92 TRANSISTOR \| BJT \| NPN \| 35V V(BR)CEO \| 200MA I(C) \| TO-92 IC MAX 7000 CPLD 64 44-TQFP IC FLEX 10KA FPGA Cyclone II FPGA 50K FBGA-484 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| TO-92 2GB DDR2 SDRAM VLP DIMM MAX 7000 CPLD 128 MC 100-TQFP TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-37 TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| TO-92 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 200MA I(C) \| TO-92 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-18 Cyclone FPGA 6K PQFP-240 CYCLONE III FPGA 119K 484FBGA MAX 7000 CPLD 64 MC 100-TQFP MAX 3000A CPLD 32 MC 44-TQFP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) TRANSISTOR \| BJT \| NPN \| 1A I(C) \| TO-105 Dual Matched Amplifiers with Digitally Programmable Gain in MSOP; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C IC MAX 7000 CPLD 128 144-TQFP MAX II CPLD 1270 LE 144-TQFP Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:220; Package/Case:484-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No Leaded Cartridge Fuse; Current Rating:12A; Voltage Rating:32V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:32V; Body Material:Glass; Diameter:6.985mm; Leaded Process Compatible:Yes; Length:32.385mm; Series:315P RoHS Compliant: Yes TRANSISTOR \| BJT \| PNP \| 6V V(BR)CEO \| TO-18 晶体管\|晶体管\|进步党\| 6V的五（巴西）总裁\|8 TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 100MA I(C) \| TO-92 晶体管\|晶体管\|叩\| 18V的五（巴西）总裁\| 100mA的一（c）\|2 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| TO-92 晶体管\|晶体管\|进步党\| 25V的五（巴西）总裁\|2 MAX 7000 CPLD 512 MC 208-PQFP 晶体管\|晶体管\|叩\| 20V的五（巴西）总裁\| 500mA的一（c）\|2 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 1A I(C) \| TO-92 晶体管\|晶体管\|进步党\| 45V的五（巴西）总裁\| 1A条一（c）\|2 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| TO-18	EM Microelectronic Bourns, Inc. SEMIKRON Samsung Semiconductor Co., Ltd. California Eastern Laboratories, Inc.

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